Development of Liquid Phase Deposition of Zirconium Oxide and Comparison to Silicon Dioxide


In a recently-developed liquid phase deposition (LPD) process silicon dioxide thin films are deposited from a solution of hexafluorosilicic acid (H2SiF6) supersaturated with SiO2 by boric acid (H3BO3) addition. In this study, an analogous process for zirconium oxide is attempted and compared to the process with SiO2. The effects of boric acid, H2ZrF6 and ammonia concentrations are studied along with differing solution preparation routes. Films of 10-70 nm thickness are achieved, though the determination of their exact composition requires further study.

This is a study I made in summer 2000 at Helsinki University of Technology Electron Physics Laboratory.

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